TOP N TYPE GE SECRETS

≤ 0.15) is epitaxially grown over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the framework is cycled by oxidizing and annealing phases. As a result of preferential oxidation of Si more than Ge [68], the original Si1–Crystallographic-orientation agnostic TiO2-centered MIS contacts could possibly be significantly